december 2012 hvm-1059-a 1 < hvigbt modules > CM1500HG-66R high power switching use insulated type 4th-version hvigbt (high voltage high insulated gate bipolar transistor) modules CM1500HG-66R ? i c 1500a ? v ces 3300v ? 1-element in a pack ? high insulated type ? lpt-igbt / soft recovery diode ? alsic baseplate application traction drives, high reliability c onverters / inverters, dc choppers outline drawing & circuit diagram dimensions in mm
< hvigbt modules > CM1500HG-66R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 (hvm-1059-a) 2 maximum ratings symbol item conditions ratings unit v ge = 0v, t j = -40?+150c 3300 v ces collector-emitter voltage v ge = 0v, t j = ? 50c 3200 v v ges gate-emitter voltage v ce = 0v, t j = 25c 20 v i c dc, t c = 90c 1500 a i crm collector current pulse (note 1) 3000 a i e dc 1500 a i erm emitter current (note 2) pulse (note 1) 3000 a p tot maximum power dissipation (note 3) t c = 25c, igbt part 14700 w v iso isolation voltage rms, sinusoidal, f = 60hz, t = 1 min. 10200 v v e partial discharge extinction voltage rms, sinusoidal, f = 60hz, q pd 10 pc 5100 v t j junction temperature ? 50 ~ +150 c t jop operating junction temperature ? 50 ~ +150 c t stg storage temperature ? 55 ~ +150 c t psc short circuit pulse width v cc = 2500v, v ce v ces , v ge =15v, t j =150c 10 ? s electrical characteristics limits symbol item conditions min typ max unit t j = 25c ? ? 6.0 t j = 125c ? 6.0 ? i ces collector cutoff current v ce = v ces , v ge = 0v t j = 150c ? 36.0 ? ma v ge(th) gate-emitter threshold voltage v ce = 10 v, i c = 150 ma, t j = 25c 5.7 6.2 6.7 v i ges gate leakage current v ge = v ges , v ce = 0v, t j = 25c ? 0.5 ? 0.5 a c ies input capacitance ? 210.0 ? nf c oes output capacitance ? 13.0 ? nf c res reverse transfer capacitance v ce = 10 v, v ge = 0 v, f = 100 khz t j = 25c ? 6.0 ? nf q g total gate charge v cc = 1800v, i c = 1500a, v ge = 15v ? 16.0 ? c t j = 25c ? 2.45 ? t j = 125c ? 3.10 3.70 v cesat collector-emitter saturation voltage i c = 1500 a (note 4) v ge = 15 v t j = 150c ? 3.25 ? v t j = 25c ? 1.00 ? t j = 125c ? 0.95 1.25 t d(on) turn-on delay time t j = 150c ? 0.95 1.25 s t j = 25c ? 0.28 ? t j = 125c ? 0.30 0.50 t r turn-on rise time t j = 150c ? 0.30 0.50 s t j = 25c ? 2.10 ? t j = 125c ? 2.75 ? e on(10%) turn-on switching energy (note 5) t j = 150c ? 3.00 ? j t j = 25c ? 2.20 ? t j = 125c ? 2.90 ? e on turn-on switching energy (note 6) v cc = 1800 v i c = 1500 a v ge = 15 v r g(on) = 1.6 ? l s = 100 nh inductive load t j = 150c ? 3.20 ? j t j = 25c ? 2.70 ? t j = 125c ? 2.80 3.30 t d(off) turn-off delay time t j = 150c 2.85 3.30 s t j = 25c ? 0.30 ? t j = 125c ? 0.35 1.00 t f turn-off fall time t j = 150c ? 0.40 1.00 s t j = 25c ? 2.00 ? t j = 125c ? 2.45 ? e off(10%) turn-off switching energy (note 5) t j = 150c 2.50 ? j t j = 25c ? 2.20 ? t j = 125c ? 2.70 ? e off turn-off switching energy (note 6) v cc = 1800 v i c = 1500 a v ge = 15 v r g(off) = 5.6 ? l s = 100 nh inductive load t j = 150c ? 2.80 ? j
< hvigbt modules > CM1500HG-66R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 (hvm-1059-a) 3 electrical characteristics (continuation) limits symbol item conditions min typ max unit t j = 25c ? 2.15 ? t j = 125c ? 2.30 2.80 v ec emitter-collector voltage (note 2) i e = 1500 a (note 4) v ge = 0 v t j = 150c ? 2.25 ? v t j = 25c ? 0.50 ? t j = 125c ? 0.70 t rr reverse recovery time (note 2) t j = 150c ? 0.80 ? s t j = 25c ? 1250 ? t j = 125c ? 1500 ? i rr reverse recovery current (note 2) t j = 150c ? 1550 ? a t j = 25c ? 1050 ? t j = 125c ? 1700 q rr reverse recovery charge (note 2) t j = 150c ? 2000 ? c t j = 25c 1.05 ? t j = 125c ? 1.75 e rec(10%) reverse recovery energy (note 2) (note 5) t j = 150c ? 2.00 ? j t j = 25c 1.20 ? t j = 125c ? 2.00 e rec reverse recovery energy (note 2) (note 6) v cc = 1800 v i c = 1500 a v ge = 15 v r g(on) = 1.6 ? l s = 100 nh inductive load t j = 150c ? 2.30 ? j thermal characteristics limits symbol item conditions min typ max unit r th(j-c)q junction to case, igbt part ? ? 8.5 k/kw r th(j-c)d thermal resistance junction to case, fwdi part ? ? 15.5 k/kw r th(c-s) contact thermal resistance case to heat sink, ? grease = 1w/m k, d (c-s) = 100 ? m ? 6.0 ? k/kw mechanical characteristics limits symbol item conditions min typ max unit m t m8 : main terminals screw 7.0 ? 22.0 nm m s m6 : mounting screw 3.0 ? 6.0 nm m t mounting torque m4 : auxiliary terminals screw 1.0 ? 3.0 nm m mass ? 1.4 ? kg cti comparative tracking index 600 ? ? ? d a clearance 26.0 ? ? mm d s creepage distance 56.0 ? ? mm l p ce parasitic stray inductance ? 15.0 ? nh r cc?+ee? internal lead resistance t c = 25c ? 0.18 ? m ? r g internal gate resistance t c = 25c ? 1.5 ? ? ? note1. pulse width and repetition rate should be such that junction temperature (t j ) does not exceed t opmax rating(150c). 2. the symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (fwd i ). 3. junction temperature (t j ) should not exceed t jmax rating (150c). 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 5. e on(10%) / e off(10%) / e rec(10%) are the integral of 0.1v ce x 0.1i c x dt. 6. definition of all items is according to iec 60747, unless otherwise specified.
< hvigbt modules > CM1500HG-66R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 (hvm-1059-a) 4 performance curves output characteristics (typical) 0 50 0 1000 1500 2000 2500 3000 0123456 collector - emitter voltage [v] coll ector current [a] v ge = 9v v ge = 11 v v ge = 15v v ge = 13 v t j = 1 50 c v ge = 1 9v collector-emitter saturation voltag e characteristics (typical) 0 500 10 00 15 00 20 00 25 00 30 00 012345 collector-emitter saturation voltage [v] coll ector current [a] v ge = 15 v tj = 1 50 c tj = 1 25 c tj = 25c transfer characteristics (typical) 0 50 0 1000 1500 2000 2500 3000 024 681012 gate - emitter voltage [v] coll ector current [a] tj = 2 5 c v ce = v ge tj = 1 50 c free-wheel diode forward characteristics (typical) 0 500 1000 1500 2000 2500 3000 012345 emitter-collector voltage [v] emitter current [a] tj = 150c tj = 25c tj = 125c
< hvigbt modules > CM1500HG-66R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 (hvm-1059-a) 5 performance curves capacitance characteristics (typical) 1 10 100 1000 0.1 1 10 100 collector-emitter voltage [v] capacitance [nf] cies v ge = 0v, tj = 25c f = 100khz coes cres half-bridge switching energy characteristics (typical) 0 1 2 3 4 5 6 7 8 0 50 0 10 00 1 50 0 20 00 2 50 0 30 00 collector current [a] switching energies [j/pulse] ere c v cc = 18 00 v, v ge = 15v r g(on) = 1.6 ? , r g( off) = 5.6 ? l s = 1 00n h, tj = 1 25 c in duct ive l oa d eoff eo n gate charge characteristics (typical) -1 5 -1 0 -5 0 5 10 15 20 0 5 10 15 20 gate charge [ c] gate-emitter voltage [v] v ce = 18 00v, i c = 1 500 a tj = 2 5 c half-bridge switching energy characteristics (typical) 0 1 2 3 4 5 6 7 8 0 50 0 10 00 1 50 0 20 00 2 50 0 30 00 collector current [a] switching energies [j/pulse] ere c v cc = 18 00 v, v ge = 15v r g(on) = 1.6 ? , r g( off) = 5.6 ? l s = 1 00n h, tj = 1 50 c in duct ive l oa d eoff eon
< hvigbt modules > CM1500HG-66R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 (hvm-1059-a) 6 performance curves half-bridge switching energy characteristics (typical) 0 1 2 3 4 5 6 7 8 024681012 gate resistor [ohm] switching energies [j/pulse] ere c v cc = 180 0v, i c = 15 00a v ge = 15v, l s = 10 0nh t j = 12 5c , i ndu cti ve lo ad eon eoff half-bridge switching time characteristics (typical) 0.01 0.1 1 10 100 100 1000 10000 collector current [a] switching times [s] tf v cc = 1800v, v ge = 15v r g(on) = 1.6 ? , r g ( o ff) = 5.6 ? l s = 100nh, tj = 125c inductive load tr td( on) td(off) half-bridge switching energy characteristics (typical) 0 1 2 3 4 5 6 7 8 024681012 gate resistor [ohm] switching energies [j/pulse] ere c v cc = 180 0v, i c = 15 00a v ge = 15v, l s = 10 0nh t j = 15 0c , i ndu cti ve lo ad eon eoff half-bridge switching time characteristics (typical) 0.01 0.1 1 10 100 100 1000 10000 collector current [a] switching times [s] tf v cc = 1800v, v ge = 15v r g(on) = 1.6 ? , r g ( o ff) = 5.6 ? l s = 100nh, tj = 150c inductive load tr td( on) td(off)
< hvigbt modules > CM1500HG-66R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 (hvm-1059-a) 7 performance curves free-wheel diode reverse recovery characteristics (typical) 0.1 1 10 100 100 1000 10000 emitter current [a] reverse recovery time [s] 10 100 1000 10000 reverse recovery current [a] trr irr v cc = 1800v, v ge = 15v r g(on) = 1.6 ? , l s = 100nh tj = 125c, inductive load transient thermal impedance characteristics 0 0.2 0.4 0.6 0.8 1 1.2 0. 001 0.01 0.1 1 10 tim e [s ] normalized transient thermal impedance r th (j-c)q = 8. 5k/ kw rth(j-c)r = 15.5k/kw free-wheel diode reverse recovery characteristics (typical) 0.1 1 10 100 100 1000 10000 emitter current [a] reverse recovery time [s] 10 100 1000 10000 reverse recovery current [a] trr irr v cc = 1800v, v ge = 15v r g(on) = 1.6 ? , l s = 100nh tj = 150c, inductive load ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? exp1 1 )( )( ? i t n i i cjth rz t 1234 r i [k/kw] : 0.0055 0.2360 0.4680 0.2905 t i [sec] : 0.0001 0.0131 0.0878 0.6247
< hvigbt modules > CM1500HG-66R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 (hvm-1059-a) 8 performance curves reverse bias safe operating area (rbsoa) 0 1000 2000 3000 4000 0 1000 2000 3000 4000 collector-emitter voltage [v] collector current [a] v cc ? 2500v, v ge = 15v tj = 150c, r g ( o ff) = 5.6 ? free-wheel diode reverse recovery safe operating area (rrsoa) 0 10 00 20 00 30 00 40 00 0 10 00 2 000 3 00 0 40 00 emitter-collector voltage [v] reverse recovery current [a] v cc ? 25 00 v, di /d t < 9 ka/ s tj = 150 c short circuit safe operating area (scsoa) 0 5 10 15 20 0 1000 2000 3000 4000 collector-emitter voltage [v] collector current [ka] v cc ? 2500v, v ge = 15v r g(on) = 1.6 ? , r g(off) = 5.6 ? tj = 150c
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